Nanometer Reliability by Danny Rittman PhD

Nanometer Reliability by Danny Rittman PhD

Innovations are necessary for interconnection technology to overcome the barrier. As we step into the deep nanometer arena, major reliability issues arise. Among them are hot electron degradation, Electromigration & Self-Heating, Oxide Breakdown (TDDB), P transistor degradation (NBTI), latch-up, ESD, Voltage Drop, Soft Error, and packaging issues. “Within high-k gate dielectrics, metal gate, copper/low-k interconnects, the introduction of new materials, processes, and devices presents challenges.

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