Innovations are necessary for interconnection technology to overcome the barrier. As we step into the deep nanometer arena, major reliability issues arise. Among them are hot electron degradation, Electromigration & Self-Heating, Oxide Breakdown (TDDB), P transistor degradation (NBTI), latch-up, ESD, Voltage Drop, Soft Error, and packaging issues. “Within high-k gate dielectrics, metal gate, copper/low-k interconnects, the introduction of new materials, processes, and devices presents challenges.
